期刊
ACS OMEGA
卷 4, 期 11, 页码 14526-14536出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsomega.9b01761
关键词
-
资金
- Japan Society for the Promotion of Science [26790050]
- Grants-in-Aid for Scientific Research [26790050] Funding Source: KAKEN
The use of a 10-nm-thick buffer layer enabled tailoring of the characteristics, such as film deposition and structural and electrical properties, of magnetron-sputtered Al-doped ZnO (AZO) films containing unintentionally retained Ar atoms. The AZO films were deposited on glass substrates coated with the buffer layer via direct-current magnetron sputtering using Ar gas, a substrate temperature of 200 degrees C, and sintered AZO targets with an Al2O3 content of 2.0 wt %. The use of a Ga-doped ZnO film possessing a texture with a specific well-defined orientation as the buffer layer was very effective for improving the crystallographic orientation, reducing the residual stress, and improving the carrier transport of the AZO films. The residual compressive stress and in-grain carrier mobility were responsible for the retention of Ar atoms by the films, as observed using an electron probe microanalyzer.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据