Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation

In this work, we have presented a theoretical study of Au/Ni/GaN Schottky diode based on current-voltage (I-V) measurement for temperature range of 120 K to 400 K. The electrical parameters of Au/Ni/GaN, such as barrier height (Phi(b)), ideality factor and series resistance have been calculated employing the conventional current-voltage (I-V), Cheung and Chattopadhyay method. Also, the variation of Gaussian distribution (P (Phi(b))) as a function of barrier height (Phi(b)) has been studied. Therefore, the modified ((ln(I-0/T-2) - (q(2)sigma(2)(s0)/2kT(2)) = ln (AA*) - qemptysetB0/kT) vs. (1/kT)) relation has been extracted from (I-V) characteristics, where the values of Phi(B0) and A(Simul)* have been found in different temperature ranges. The obtained results have been compared to the existing experimental data and a good agreement was found.