期刊
JOURNAL OF APPLIED CRYSTALLOGRAPHY
卷 52, 期 -, 页码 1077-1086出版社
INT UNION CRYSTALLOGRAPHY
DOI: 10.1107/S1600576719010707
关键词
X-ray diffraction; silicon nanowires; strain relaxation; bending profiles; torsion profiles; dislocations; metal-assisted chemical etching; structural defects
Investigations performed on silicon nanowires of different lengths by scanning electron microscopy revealed coalescence processes in longer nanowires. Using X-ray diffraction (XRD), it was found that the shape of the pole figure in reciprocal space is ellipsoidal. This is the signature of lattice defects generated by the relaxation of the strain concentrated in the coalescence regions. This observation is strengthened by the deviation of the XRD peaks from Gaussianity and the appearance of the acoustic phonon mode in the Raman spectrum. It implies that bending, torsion and structural defects coexist in the longer nanowires. To separate these effects, a grazing-incidence XRD technique was conceived which allows the nanowire to be scanned along its entire length. Both omega and phi rocking curves were recorded, and their shapes were used to extract the bending and torsion profiles, respectively, along the nanowire length. Dips were found in both profiles of longer nanowires, while they are absent from shorter ones, and these dips correspond to the regions where both bending and torsion relax. The energy dissipated in the nanowires, which tracks the bending and torsion profiles, has been used to estimate the emergent dislocation density in nanowire arrays.
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