期刊
NANOMATERIALS
卷 9, 期 9, 页码 -出版社
MDPI
DOI: 10.3390/nano9091273
关键词
IGZO composition; solution combustion synthesis; transparent amorphous semiconductor oxides; low voltage operation
类别
资金
- FCT-Portuguese Foundation for Science and Technology [UID/CTM/50025/2019]
- FCT-MCTES
- European Community [H2020 NMP-22-2015, 685758]
- FCT-MCTES [SFRH/BD/116047/2016]
- DS-FunMat-INNO project FPA2016/EIT/EIT Raw Materials Grant [15015]
- Fundação para a Ciência e a Tecnologia [SFRH/BD/116047/2016] Funding Source: FCT
Solution-processed metal oxides have been investigated as an alternative to vacuum-based oxides to implement low-cost, high-performance electronic devices on flexible transparent substrates. However, their electrical properties need to be enhanced to apply at industrial scale. Amorphous indium-gallium-zinc oxide (a-IGZO) is the most-used transparent semiconductor metal oxide as an active channel layer in thin-film transistors (TFTs), due to its superior electrical properties. The present work evaluates the influence of composition, thickness and ageing on the electrical properties of solution a-IGZO TFTs, using solution combustion synthesis method, with urea as fuel. After optimizing the semiconductor properties, low-voltage TFTs were obtained by implementing a back-surface passivated 3-layer In:Ga:Zn 3:1:1 with a solution-processed high-k dielectric; AlOx. The devices show saturation mobility of 3.2 cm(2) V-1 s(-1), I-On/I-Off of 10(6), SS of 73 mV dec(-1) and V-On of 0.18 V, thus demonstrating promising features for low-cost circuit applications.
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