期刊
ADVANCED MATERIALS INTERFACES
卷 6, 期 19, 页码 -出版社
WILEY
DOI: 10.1002/admi.201901133
关键词
amorphous; nonstoichiometric; photoinduced charge transfer; surface-enhanced Raman scattering; tungsten oxide
资金
- National Key R&D Program of China [2017YFA0403600]
- National Natural Science Foundation of China [11874108]
- Fundamental Research Funds for the Central Universities
- Postgraduate Research & Practice Innovation Program of Jiangsu Province [KYCX17_0046]
- China Scholarship Council [201706090225]
Semiconducting surface-enhanced Raman scattering (SERS) materials have attracted tremendous attention for their good signal uniformity, chemical stability, and biocompatibility. Here, a new concept to design high sensitivity semiconducting SERS substrates through integration of both amorphous and nonstoichiometric features of WO3-x thin films is presented. The integration of these two features provides narrower bandgap, additional defect levels within the bandgap, stronger exciton resonance, and higher electronic density of states near the Fermi level. These characteristics lead to a synergy to promote the photoinduced charge transfer resonance between analytes and substrate by offering efficient routes of charge escaping and transferring as well as strong vibronic coupling, thus realizing high SERS activity on amorphous nonstoichiometric WO3-x films.
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