期刊
ACS PHOTONICS
卷 6, 期 10, 页码 2421-2431出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.9b00491
关键词
manganese doped; quantum dots; photoluminescence mechanism; lead sulfide; temperature-dependent optical properties
类别
资金
- NSERC
- Canada Research Chairs program
- Qingdao University
- Natural Science Foundation of Shandong Province [ZR2018MB001]
- UNESCO Chair in Materials and Technologies for Energy Conversion, Saving and Storage (MATECSS)
- University of Electronic Science and Technology of China
- UNESCO Chair MATECSS
- Fonds de recherche du Quebec Nature et technologies (FRQNT)
Doping in semiconductor quantum dots (QDs) is a promising approach for introducing unique properties compared to pure QDs. Although manganese (Mn) ion-doped wide band gap QDs have been widely studied, the optical properties of Mn-doped narrow band gap semiconductors are not well understood. Here, we report the synthesis of oil-soluble Mn-doped lead sulfide (PbS) QDs of identical size with different Mn contents. Compared to pure PbS QDs, the photoluminescence (PL) peak positions of Mn-doped PbS QDs exhibit a significant red-shift, resulting in a larger Stokes shift. The large Stokes shift of Mn-doped QDs is due to the electronic state of Mn ions, in which the photogenerated electron is transferred to the energy states of Mn ions and then recombined with holes. Mn-doped PbS QDs exhibit a faster temperature-dependent PL response compared to pure PbS QDs, demonstrating that the Mn-doped PbS QDs are promising alternatives for use as thermal sensors.
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