期刊
NANO ENERGY
卷 62, 期 -, 页码 205-211出版社
ELSEVIER
DOI: 10.1016/j.nanoen.2019.05.052
关键词
Cu(In; Ga) Se-2; CIGS; Solar cells; Ga grading; Active control
类别
资金
- Hong Kong Research Grant Council [T23-407/13-N, 14306014, 14315616]
Highly efficient Cu(In,Ga)Se-2 (CIGS) thin film solar cells are often fabricated with a double Ga grading along the thickness direction of the light absorber. In this work, through a progressive procedure of using time-dependent Ga and In deposition rates, it is manifested that how the detailed shape of the double Ga grading profile in terms of the depth of the V-shape, the width of the V-shape, and the spatial position of the minimum bandgap can be experimentally actively manipulated. Moreover, the effect of the aforementioned features of the Ga grading profile on the photo-generated current has been uncovered by the progressive improvement in the spectral response of the external quantum efficiency spectra. Within the effort of our optimization, a CIGS solar cell with a conversion efficiency of 20.3% is obtained, believed to be the best reported for CIGS solar cells without actively using alkali post deposition treatment technology. This work has provided a practical and operable route to actively control the Ga grading profile and turned the fabrication of high efficiency CIGS solar cell from an art to more a science.
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