G-band Rectangular Beam Extended Interaction Klystron Based on Bi-Periodic Structure

A rectangular beam G-band extended interaction klystron (EIK) based on planar bi-periodic slow wave structure (SWS) is proposed. Such structure has the advantages of uniform and strong electric field, as well as the large frequency spacing, which implies that EIK adopting such structure will have strong beam-wave interaction and will be easy to avoid the mode competition. Furthermore, the planar structure is compatible to the microfabrication technology, thus reducing the fabrication difficulty of THz vacuum electron devices with small sizes. Compared with the sheet beam and large beam current, the rectangular beam with small aspect ratio and the decreased current is easy to realize the beam focusing and high power in engineering. Under the voltage of 16.5 kV, current of 0.3 A, and beam size of 0.30 mm x 0.13 mm, particle in cell simulations show a considerable output power of 390 W, with gain of 38.9 dB, efficiency of 7.9%, and relatively wide bandwidth of 800 MHz. The high-frequency structure has been fabricated by computer numerical control method, and the measurement results are close to the simulations. The proposed planar bi-periodic SWS shows certain superiorities in the performance improvement of millimeter-wave and terahertz EIK.