期刊
IEEE JOURNAL OF PHOTOVOLTAICS
卷 9, 期 5, 页码 1175-1181出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2019.2922368
关键词
Ceramic roller inline diffusion (CRID); dead layer; sheet resistance; standard deviation
资金
- Young Scientists Fund of the National Natural Science Foundation of China [61704045]
- Public Welfare Technology Research Project of Zhejiang Province [LGG19F040001]
- Juli New Energy Co., Ltd.
- Beijing Solaray Technology Co., Ltd.
Crystalline silicon solar cells and modules have dominated terrestrial photovoltaic market. Inline diffusion as an alternative emitter fabrication method has been focused on due to its lower budget cost and higher throughput. In this study, phosphorus emitter with less metallic contamination was realized by means of ceramic roller inline diffusion (CRID) and diluted H3PO4 solution (5%) as a dopant source. A wide range of homogeneous sheet resistance (R-sq) (40-130 Omega/sq) was obtained at temperature increases from 810 to 870 degrees C with duration fixed on 20 min. A standard deviation (SD) of 2.1 Omega/sq was gained by CRID at the target R-sq of 75 Omega/sq compared with the SD of 4.0 Omega/sq by reference tube diffusion (TD). The R-sq can be adjusted from 71.1 to 115.6 Omega/sq by a removal of predefined dead layer in 1% KOH solution, which allows SD within a range of 2.1 to 5.2 Omega/sq. For a target R sq of 85 Omega/sq, cells with efficiency SD of 0.02% were achieved by CRID, which were reduced by 76.8% relative to that by TD. The results in combination with Suns-Voc measurement indicate that CRID cells with uniform emitters have high potential for efficiency enhancement based on our investigation, which are catering for higher cell performance with multibusbar design in the near future.
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