4.6 Article

MoSx Quantum Dot-Modified Black Silicon for Highly Efficient Photoelectrochemical Hydrogen Evolution

期刊

ACS SUSTAINABLE CHEMISTRY & ENGINEERING
卷 7, 期 21, 页码 17598-17605

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acssuschemeng.9b03248

关键词

black silicon; MoSx quantum dots; photocathode; hydrogen evolution reaction

资金

  1. National Natural Science Foundation of China [51770000, 21777164, 51802066]
  2. Natural Science Foundation of Anhui Province [1608085QE000]
  3. Fundamental Research Funds for the Central Universities [JZ2017HGTB000]
  4. 111 Project New Materials and Technology for Clean Energy [B18018]
  5. Opening Foundation of Guangxi Key Laboratory of Electrochemical Energy Materials
  6. Key Technologies R&D Program of Anhui Province [1704c0402195]

向作者/读者索取更多资源

Nanostructured black silicon (bSi) is widely used for solar water-splitting application due to the excellent light-harvesting properties and large surface area-to-volume ratio that favors photoelectrochemical reactions. However, bSi suffers from low catalytic activity, owing to its poor charge transfer kinetics during the hydrogen evolution process. In this work, we developed a novel photoelectrode by incorporating molybdenum sulfide (MoSx) quantum dots on the surface of black silicon. The synergetic effect of MoSx and bSi significantly enhances the activity for the hydrogen evolution reaction. An onset potential of 0.255 V-RHE, a high short-circuit photocurrent density (J(sc)) of 12.2 mA.cm(-2), and a hydrogen evolution rate of 226.5 mu mol.h(-1).cm(-2) have been achieved.

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