期刊
AIP ADVANCES
卷 9, 期 9, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5114866
关键词
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资金
- MEXT, Program for research and development of next generation semiconductor to realize energy-saving society
- JSPS KAKENHI Grant [JP17858100]
In this study, V-shaped dislocations in a GaN epitaxial layer on a free-standing GaN substrate were observed. Our investigation further revealed that the V-shaped dislocations were newly generated at the interface in the epilayer rather than propagated from the GaN substrate. V-shaped dislocations consist of two straight parts. The straight parts of the V-shaped dislocations were separated from each other in the m-direction and tilted toward the step-flow direction of the GaN epitaxial layer. The V-shaped dislocations are continuous single dislocations having a Burgers vector component of 1a and an intrinsic stacking fault between their straight parts.
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