期刊
ADVANCED ENERGY MATERIALS
卷 9, 期 39, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.201901268
关键词
dopant free; hole mobility; hole-transporting materials; molecular packing; perovskite solar cells
类别
资金
- National Science Foundation of China [51803035]
- Natural Science Foundation of Guangdong Province [2017A030310039]
In this paper, two novel D-pi-D hole-transporting materials (HTM) are reported, abbreviated as BDT-PTZ and BDT-POZ, which consist of 4,8-di(hexylthio)-benzo[1,2-b:4,5-b ']dithiophene (BDT) as pi-conjugated linker, and N-(6-bromohexyl) phenothiazine (PTZ)/N-(6-bromohexyl) phenoxazine (POZ) as donor units. The above two HTMs are deployed in p-i-n perovskite solar cells (PSCs) as dopant-free HT layers, exhibiting excellent power conversion efficiencies of 18.26% and 19.16%, respectively. Particularly, BDT-POZ demonstrates a superior fill factor of 81.7%, which is consistent with its more efficient hole extraction and transport verified via steady-state/transient fluorescence spectra and space-charge-limited current technique. Single-crystal X-ray diffraction characterization implies these two molecules present diverse packing tendencies, which may account for various interfacial hole-transport ability in PSCs.
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