4.8 Article

Ion-Enhanced Field Emission Triboelectric Nanogenerator

期刊

ADVANCED ENERGY MATERIALS
卷 9, 期 37, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.201901731

关键词

energy harvesting; ion-enhanced field emission; mechanical energy; triboelectric nanogenerators

资金

  1. National Research Foundation of Korea (NRF) - Korea government (MSIT) [2016R1A4A1012950]
  2. Nano.Material Technology Development Program through the National Research Foundation of Korea (NRF) - Ministry of Science and ICT [NRF-2016M3A7B4910532]
  3. R&D Program of the Korea Railroad Research Institute, Republic of Korea
  4. National Research Council of Science & Technology (NST), Republic of Korea [PK1902A3] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  5. National Research Foundation of Korea [22A20152813260, 2016R1A4A1012950, 22A20130012138] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

As interest in triboelectric nanogenerators (TENGs) continues to increase, some studies have reported that certain limitations exist in TENG due to high potential difference, resulting in air breakdown and field emission. In addition, with known limitations such as extremely low voltage at low external resistance, a breakthrough is required to overcome the limitations of TENG. Here, a new TENG mechanism is reported, utilizing ion-enhanced field emission (IEFE). Using a simple IEFE-inducing layer, which consists of a charge accumulation layer and a metal-to-metal contact point, electrons can flow directly to a counter electrode while generating high-output power. Under vertical contact-separation input, the generated root mean square (RMS) power of IEFE-TENG is 635% higher compared to conventional TENG. As the fundamental mechanism of the IEFE-TENG is based on installing this simple IEFE-inducing layer, the power output of existing TENGs including sliding mode types can be boosted. This new TENG mechanism can be a new standard for metal-metal contact TENGs to effectively amplify the output power and to overcome potential limitations.

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