相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Current Aperture Vertical β-Ga2O3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping
Man Hoi Wong et al.
IEEE ELECTRON DEVICE LETTERS (2019)
Dynamic Switching Characteristics of 1 A Forward Current beta-Ga2O3 Rectifiers
Jiancheng Yang et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2019)
Schottky x-ray detectors based on a bulk β-Ga2O3 substrate
Xing Lu et al.
APPLIED PHYSICS LETTERS (2018)
Guest Editorial: The dawn of gallium oxide microelectronics
Masataka Higashiwaki et al.
APPLIED PHYSICS LETTERS (2018)
A survey of acceptor dopants for beta-Ga2O3
John L. Lyons
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2018)
Acceptor doping of beta-Ga2O3 by Mg and N ion implantations
Man Hoi Wong et al.
APPLIED PHYSICS LETTERS (2018)
1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2
Wenshen Li et al.
APPLIED PHYSICS LETTERS (2018)
First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes
Kohei Sasaki et al.
IEEE ELECTRON DEVICE LETTERS (2017)
High Breakdown Voltage (-201) β-Ga2O3 Schottky Rectifiers
Jiancheng Yang et al.
IEEE ELECTRON DEVICE LETTERS (2017)
Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors
T. Paul Chow et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
Ab initio study of N-doped β-Ga2O3 with intrinsic defects: the structural, electronic and optical properties
Linpeng Dong et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2017)
Switching performance of quasi-vertical GaN-based p-i-n diodes on Si
Xu Zhang et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2017)
High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3
Jiancheng Yang et al.
APPLIED PHYSICS LETTERS (2017)
1-kV vertical Ga2O3 field-plated Schottky barrier diodes
Keita Konishi et al.
APPLIED PHYSICS LETTERS (2017)
Temperature-dependent capacitance-voltage and current-voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n--Ga2O3 drift layers grown by halide vapor phase epitaxy
Masataka Higashiwaki et al.
APPLIED PHYSICS LETTERS (2016)
High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth
Akito Kuramata et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
High-mobility β-Ga2O3((2)over-bar01) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact
Toshiyuki Oishi et al.
APPLIED PHYSICS EXPRESS (2015)
Development of gallium oxide power devices
Masataka Higashiwaki et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2014)
Ga2O3 Schottky Barrier Diodes Fabricated by Using Single-Crystal β-Ga2O3 (010) Substrates
Kohei Sasaki et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Planar Nearly Ideal Edge-Termination Technique for GaN Devices
A. Merve Ozbek et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method
Hideo Aida et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2008)
Large-size β-Ga2O3 single crystals and wafers
EG Víllora et al.
JOURNAL OF CRYSTAL GROWTH (2004)
分享论文
