期刊
NATURE
卷 573, 期 7775, 页码 507-518出版社
NATURE PORTFOLIO
DOI: 10.1038/s41586-019-1573-9
关键词
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资金
- US National Science Foundation (NSF)
- US Office of Naval Research (ONR)
- Presidential Early Career Award for Scientists and Engineers (PECASE) through the US Army Research Office
- NSF
- AFOSR MURI
- Semiconductor Research Corporation (SRC) STARnet FAME
- SRC JUMP ASCENT
- Logic Imec Industrial Affiliation Program
- Graphene Flagship initiative
- Government of Catalonia through an SGR grant (2017) [1656]
- Spanish Ministry of Economy and Competitiveness through the Severo Ochoa Programme for Centres of Excellence in RD [SEV-2015-0522]
- Fundacio Cellex Barcelona
- CERCA Programme/Generalitat de Catalunya
- European Union [785219]
- Stanford SystemX Alliance
- Stanford Non-Volatile Memory Technology Research Initiative (NMTRI)
The development of silicon semiconductor technology has produced breakthroughs in electronics-from the microprocessor in the late 1960s to early 1970s, to automation, computers and smartphones-by downscaling the physical size of devices and wires to the nanometre regime. Now, graphene and related two-dimensional (2D) materials offer prospects of unprecedented advances in device performance at the atomic limit, and a synergistic combination of 2D materials with silicon chips promises a heterogeneous platform to deliver massively enhanced potential based on silicon technology. Integration is achieved via three-dimensional monolithic construction of multifunctional high-rise 2D silicon chips, enabling enhanced performance by exploiting the vertical direction and the functional diversification of the silicon platform for applications in opto-electronics and sensing. Here we review the opportunities, progress and challenges of integrating atomically thin materials with silicon-based nanosystems, and also consider the prospects for computational and non-computational applications.
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