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Graphene and two-dimensional materials for silicon technology

期刊

NATURE
卷 573, 期 7775, 页码 507-518

出版社

NATURE PORTFOLIO
DOI: 10.1038/s41586-019-1573-9

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资金

  1. US National Science Foundation (NSF)
  2. US Office of Naval Research (ONR)
  3. Presidential Early Career Award for Scientists and Engineers (PECASE) through the US Army Research Office
  4. NSF
  5. AFOSR MURI
  6. Semiconductor Research Corporation (SRC) STARnet FAME
  7. SRC JUMP ASCENT
  8. Logic Imec Industrial Affiliation Program
  9. Graphene Flagship initiative
  10. Government of Catalonia through an SGR grant (2017) [1656]
  11. Spanish Ministry of Economy and Competitiveness through the Severo Ochoa Programme for Centres of Excellence in RD [SEV-2015-0522]
  12. Fundacio Cellex Barcelona
  13. CERCA Programme/Generalitat de Catalunya
  14. European Union [785219]
  15. Stanford SystemX Alliance
  16. Stanford Non-Volatile Memory Technology Research Initiative (NMTRI)

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The development of silicon semiconductor technology has produced breakthroughs in electronics-from the microprocessor in the late 1960s to early 1970s, to automation, computers and smartphones-by downscaling the physical size of devices and wires to the nanometre regime. Now, graphene and related two-dimensional (2D) materials offer prospects of unprecedented advances in device performance at the atomic limit, and a synergistic combination of 2D materials with silicon chips promises a heterogeneous platform to deliver massively enhanced potential based on silicon technology. Integration is achieved via three-dimensional monolithic construction of multifunctional high-rise 2D silicon chips, enabling enhanced performance by exploiting the vertical direction and the functional diversification of the silicon platform for applications in opto-electronics and sensing. Here we review the opportunities, progress and challenges of integrating atomically thin materials with silicon-based nanosystems, and also consider the prospects for computational and non-computational applications.

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