期刊
NANOSCALE RESEARCH LETTERS
卷 14, 期 1, 页码 -出版社
SPRINGEROPEN
DOI: 10.1186/s11671-019-3092-x
关键词
beta-Ga2O3; Contacts; Intermediate semiconductor layer
资金
- National Natural Science Foundation of China [61774041, 61704095, 61474027]
- Guangdong Province Key Technologies Research and Development Program [2019B010128001]
- Shanghai Science and Technology Innovation Program [19520711500]
The Al-doped effects on the band offsets of ZnO/beta-Ga2O3 interfaces are characterized by X-ray photoelectron spectroscopy and calculated by first-principle simulations. The conduction band offsets vary from 1.39 to 1.67 eV, the valence band offsets reduce from 0.06 to - 0.42 eV, exhibiting an almost linear dependence with respect to the Al doping ratio varying from 0 to 10%. Consequently, a type-I band alignment forms at the interface of ZnO/beta-Ga2O3 heterojunction and the AZO/beta-Ga2O3 interface has a type-II band alignment. This is because incorporating Al into the ZnO would open up the band gaps due to the strong Al and O electron mixing, and the conduction and valence band edges consequently shift toward the lower level.
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