4.8 Article

Evidence of Topological Edge States in Buckled Antimonene Monolayers

期刊

NANO LETTERS
卷 19, 期 9, 页码 6323-6329

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b02444

关键词

Antimonene monolayer; topological edge state; quantum spin Hall effect; STM; DFT

资金

  1. National Natural Science Foundation of China [61725107, 51572290, 11974045, 61888102]
  2. National Key Research & Development Projects of China [2016YFA0202300]
  3. Strategic Priority Research Program of the Chinese Academy of Sciences [XDB30000000, XDB28000000]

向作者/读者索取更多资源

Two-dimensional topological materials have attracted intense research efforts owing to their promise in applications for low-energy, high-efficiency quantum computations. Group-VA elemental thin films with strong spin-orbit coupling have been predicted to host topologically nontrivial states as excellent two-dimensional topological materials. Herein, we experimentally demonstrated for the first time that the epitaxially grown high-quality antimonene monolayer islands with buckled configurations exhibit significantly robust one-dimensional topological edge states above the Fermi level. We further demonstrated that these topologically nontrivial edge states arise from a single p-orbital manifold as a general consequence of atomic spin-orbit coupling. Thus, our findings establish monolayer antimonene as a new class of topological monolayer materials hosting the topological edge states for future low-power electronic nanodevices and quantum computations.

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