4.8 Article

Interfacial Engineering at the 2D/3D Heterojunction for High-Performance Perovskite Solar Cells

期刊

NANO LETTERS
卷 19, 期 10, 页码 7181-7190

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b02781

关键词

Perovskite solar cell; 2D/3D heterojunction; ligand chemistry; interfacial mechanism; high performance

资金

  1. National Key Research and Development Program of China [2017YFA0204800, 2016YFA0202403]
  2. Key projects of the Natural Science Foundation of China [51933010]
  3. National Natural Science Foundation of China [61974085, 61604092]
  4. Natural Science Basic Research Plan in Shaanxi Province of China [2017JQ6040]
  5. 111 Project [B14041]
  6. National 1000 Talents Plan program [1110010341]
  7. King Abdullah University for Science and Technology (KAUST)
  8. NSF [DMR-1332208]

向作者/读者索取更多资源

Perovskite solar cells based on two-dimensional/three-dimensional (2D/3D) hierarchical structure have attracted significant attention in recent years due to their promising photovoltaic performance and stability. However, obtaining a detailed understanding of interfacial mechanism at the 2D/3D heterojunction, for example, the ligand-chemistry-dependent nature of the 2D/3D heterojunction and its influence on charge collection and the final photovoltaic outcome, is not yet fully developed. Here we demonstrate the underlying 3D phase templates growth of quantum wells (QWs) within a 2D capping layer, which is further influenced by the fluorination of spacers and compositional engineering in terms of thickness distribution and orientation. Better QW alignment and faster dynamics of charge transfer at the 2D/3D heterojunction result in higher charge mobility and lower charge recombination loss, largely explaining the significant improvements in charge collection and open-circuit voltage (V-OC) in complete solar cells. As a result, 2D/3D solar cells with a power-conversion efficiency of 21.15% were achieved, significantly higher than the 3D counterpart (19.02%). This work provides key missing information on how interfacial engineering influences the desirable electronic properties of the 2D/3D hierarchical films and device performance via ligand chemistry and compositional engineering in the QW layer.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据