期刊
NANO LETTERS
卷 19, 期 10, 页码 6914-6923出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b02166
关键词
2D materials; TMDCs; heterostructures; edge contacts; encapsulation
类别
资金
- Swiss National Science Foundation [200021_165841]
- ETH Zurich [ETH-32 15-1]
- CSCS [s876]
- Elemental Strategy Initiative
- JSPS KAKENHI [JPI5K21722]
Integration of electrical contacts into van der Waals (vdW) heterostructures is critical for realizing electronic and optoelectronic functionalities. However, to date no scalable methodology for gaining electrical access to buried monolayer two-dimensional (2D) semiconductors exists. Here we report viable edge contact formation to hexagonal boron nitride (hBN) encapsulated monolayer MoS2. By combining reactive ion etching, in situ Ar+ sputtering and annealing, we achieve a relatively low edge contact resistance, high mobility (up to similar to 30 cm(2) V-1 s(-1)) and high on-current density (>50 mu A/mu m at V-DS = 3V), comparable to top contacts. Furthermore, the atomically smooth hBN environment also preserves the intrinsic MoS2 channel quality during fabrication, leading to a steep subthreshold swing of 116 mV/dec with a negligible hysteresis. Hence, edge contacts are highly promising for large-scale practical implementation of encapsulated heterostructure devices, especially those involving air sensitive materials, and can be arbitrarily narrow, which opens the door to further shrinkage of 2D device footprint.
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