期刊
MRS BULLETIN
卷 44, 期 9, 页码 691-698出版社
SPRINGER HEIDELBERG
DOI: 10.1557/mrs.2019.207
关键词
liquid; glass; metal; semiconducting; phase transformation
资金
- National Science Foundation (NSF)-Division of Materials Research [1832817]
- NSF Chemistry Division [CHE-1213265, CHE-185606]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1832817] Funding Source: National Science Foundation
While fast-switching rewritable nonvolatile memory units based on phase-change materials (PCMs) are already in production aT(m)ajor technology companies such as Intel (16-64 GB chips are currently available), an in-depth understanding of the physical factors that determine their success is still lacking. Recently, we have argued for a liquid-phase metal-to-semiconductor transition (M-SC), located not far below the melting point, T-m, as essential. The M-SC is itself a consequence of atomic rearrangements that are involved in a fragile-to-strong viscosity transition that controls both the speed of crystallization and the stabilization of the semiconducting state. Here, we review past work and introduce a new parameter, the metallicity (inverse of the average Pauling electronegativity of a multicomponent alloy). When T-m -scaled temperatures of known M-SCs of Group IV, V, and VI alloys are plotted against their metallicities, the curvilinear plot leads directly to the composition zone of all known PCMs and the temperature interval below T-m, where the transition should occur. The metallicity concept could provide guidance for tailoring PCMs.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据