期刊
MICROELECTRONICS RELIABILITY
卷 100, 期 -, 页码 -出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2019.113453
关键词
-
资金
- Council for Science, Technology and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), Next-generation power electronics (funding agency: NEDO)
Within this paper, we report the first study on the reliability of isolation structures and surfaces for the gallium oxide material system. Even though insulation by Mg-doping implantation and diffusion is found to provide a stable electrical isolation at increasing temperature, a significant thermally-activated leakage flows through surface states. The vertical bulk material does provide a better stability of the isolation over stress time, but withstands a lower level of stress compared with the surface and the lateral structure, possibly due to the charge trapping at the surface of the latter that mitigates the peak electric field.
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