4.3 Article Proceedings Paper

Rapid diagnosis of hot spot failure of crystalline silicon PV module based on I-V curve

期刊

MICROELECTRONICS RELIABILITY
卷 100, 期 -, 页码 -

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PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2019.113402

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资金

  1. National Key Research and Development Program [2017YFE0112400]
  2. Central Research Institute [17]

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Hot spot failure of PV modules has become one of the most important factors affecting the reliability of PV power generation systems. This study proposes a hot spot fault diagnosis method based on I-V curve of PV modules, which is based on distance calculation between scan points and lines formed by the points. By this method, various types of I-V curves can be quickly distinguished to diagnose hot spot faults. Finally, the diagnostic effect of the method was evaluated through a large number of PV power station field tests.

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