Memristors based on amorphous ZnSnO films

Memristors based on amorphous oxide semiconductors (AOSs) have attracted considerable attention recently. Here we present the study of amorphous ZnSnO (a-ZTO) memristors. The a-ZTO memristors were fabricated with Al layers as the bottom and top electrodes. The a-ZTO thin films, deposited by pulsed laser deposition, could be formed on the Al layer uniformly, and the Al layers were effective electrodes for a-ZTO memristors. It was verified that the a-ZTO memristors had obvious resistive switching (RS) behaviors, with a high ratio (similar to 10(3)) of high-resistance and low-resistance states. Almost the same current-voltage curves were observed for five cycles, revealing the stable and reliable nature of devices. Our study demonstrated the a-ZTO memristors is a potential candidate to produce high-quality resistive random-access memories, which may open a path to applications of memristors based on indium-free AOSs. (C) 2019 Elsevier B.V. All rights reserved.