4.7 Article

Grain boundary engineering that induces ultrahigh permittivity and decreased dielectric loss in CdCu3Ti4O12 ceramics

期刊

JOURNAL OF THE AMERICAN CERAMIC SOCIETY
卷 103, 期 2, 页码 1230-1240

出版社

WILEY
DOI: 10.1111/jace.16821

关键词

complex impedance; dielectric properties; grain boundary resistance; large permittivity; low dielectric loss

资金

  1. National Natural Science Foundation of China [51872177, 51572163, 51577111, 51607108]
  2. Natural Science Basic Research Plan in Shaanxi Province of China [2019JQ-672]
  3. Fundamental Research Funds for Central Universities [2018TS081, GK201903017, GK201802007, 201701011]

向作者/读者索取更多资源

Dielectric materials with ultrahigh permittivity are attracting attention due to the increasing demand for these types of materials for microelectronics and energy storage applications. In this work, we successfully synthesized Zn-doped CdCu3Ti4O12 (CdCTO) ceramics with low dielectric loss and large permittivity via an ordinary mixed-oxide technique. Remarkably, at a Zn doping level of 0.10, a CdCu2.9Zn0.1Ti4O12 ceramic exhibited both decreased dielectric loss tangent of similar to 0.058 and large dielectric permittivity > 4.0 x 10(4), as well as a good frequency stability over a wide frequency range from 40 Hz to 10(6) Hz. The high dielectric performance was attributed to the enhanced grain boundary resistance and internal barrier layer capacitor (IBLC) effect due to the fine and uniform grains that formed upon Zn doping. The findings reported in this work provide valuable insights into how to simultaneously realize a low dielectric loss and high permittivity in CdCTO and other related dielectric ceramics.

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