期刊
JOURNAL OF RAMAN SPECTROSCOPY
卷 50, 期 12, 页码 1867-1874出版社
WILEY
DOI: 10.1002/jrs.5736
关键词
anharmonicity; double-resonance Raman; low temperature; MoS2; multi-phonon interactions; photoluminescence
类别
资金
- Fundacao de Amparo a Pesquisa do Estado de Minas Gerais (FAPEMIG, Federative Republic of Brazil)
- FINEP (Financiadora de Inovacao e Pesquisa)
- Conselho Nacional de Desenvolvimento Cientifico e Tecnologico (CNPq, Federative Republic of Brazil)
- Coordenacao de Aperfeicoamento de Pessoal de Nivel Superior (CAPES, Federative Republic of Brazil)
- Instituto Nacional de Ciencia e Tecnologia (INCT) em Nanomateriais de Carbono (Federative Republic of Brazil)
This work reports a detailed study of the double-resonance (DR) Raman bands of single-layer MoS2 as a function of temperature, using many different laser energies in the region of the excitonic transitions and at different temperatures between 80 and 300 K. Our measurements show that the DR bands are strongly affected by temperature and the results are explained in terms of the temperature dependence of both the phonon wavenumber and the excitonic energy. In order to distinguish these two effects, the excitonic transitions were directly measured by photoluminescence as a function of temperature. It was observed from the multiple-excitation results that the dispersion of the DR bands measured with different laser lines depends on temperature. The resonance condition was evidenced by considering the difference between energies of the laser excitation and the excitonic transition, at a given temperature. Our findings for the temperature dependence of the DR process in single-layer MoS2 can be extended to other classes of transition metal dichalcogenide materials.
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