期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 59, 期 -, 页码 -出版社
IOP Publishing Ltd
DOI: 10.7567/1347-4065/ab489a
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资金
- JSPS KAKENHI [18H01822, 25107004]
- Grants-in-Aid for Scientific Research [18H01822] Funding Source: KAKEN
A low-temperature growth method for crystalline thin films of transition metal dichalcogenides (TMDCs) is urgently required to use various materials as substrates. In this paper, we report the growth of crystalline tungsten disulfide (WS2) thin films at a low growth temperature of 400 degrees C by using organic liquid precursors: bis(tert-butylimido)bis(dimethylamido)tungsten(VI) [(t-BuN)(2)W(NMe2)(2)] and di-tert-butyl disulfide [(t-C4H9)(2)S-2]. To achieve low-temperature growth, these precursors were introduced onto a substrate through pulse-controlled valves that are similar to the atomic layer deposition process. Furthermore, we determined that a crystalline WS2 film can be grown even at 350 degrees C on the entire surface of a SiO2/Si substrate by first depositing a catalytic metal film (W or Au) onto a limited area of the substrate, although almost no growth of the crystalline WS2 film was observed at 350 degrees C without pre-deposition of the metal film. (C) 2019 The Japan Society of Applied Physics
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