4.3 Article Proceedings Paper

Low-temperature growth of crystalline tungsten disulfide thin films by using organic liquid precursors

期刊

出版社

IOP Publishing Ltd
DOI: 10.7567/1347-4065/ab489a

关键词

-

资金

  1. JSPS KAKENHI [18H01822, 25107004]
  2. Grants-in-Aid for Scientific Research [18H01822] Funding Source: KAKEN

向作者/读者索取更多资源

A low-temperature growth method for crystalline thin films of transition metal dichalcogenides (TMDCs) is urgently required to use various materials as substrates. In this paper, we report the growth of crystalline tungsten disulfide (WS2) thin films at a low growth temperature of 400 degrees C by using organic liquid precursors: bis(tert-butylimido)bis(dimethylamido)tungsten(VI) [(t-BuN)(2)W(NMe2)(2)] and di-tert-butyl disulfide [(t-C4H9)(2)S-2]. To achieve low-temperature growth, these precursors were introduced onto a substrate through pulse-controlled valves that are similar to the atomic layer deposition process. Furthermore, we determined that a crystalline WS2 film can be grown even at 350 degrees C on the entire surface of a SiO2/Si substrate by first depositing a catalytic metal film (W or Au) onto a limited area of the substrate, although almost no growth of the crystalline WS2 film was observed at 350 degrees C without pre-deposition of the metal film. (C) 2019 The Japan Society of Applied Physics

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.3
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据