期刊
IEEE TRANSACTIONS ON POWER ELECTRONICS
卷 34, 期 8, 页码 7983-7995出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2018.2882402
关键词
Electrothermal effects; finite difference methods (FDM); insulated-gate bipolar transistor (IGBTs); monitoring; observers; power electronics; real-time systems; reliability estimation; semiconductor device modeling
资金
- German Academic Exchange Service (DAAD)
This paper presents amethodology for real-time monitoring of 3-D temperature distributions and device losses within power electronic modules. It allows precise thermal management, empirical lifetime prognosis, and detection of critical degradation of the power module. By effective combination of thermal 3-D finite differencemodeling, parametric loss models, and model truncation techniques, a compact thermal real-time model is derived. It enables the computation of device losses and temperatures at critical locations within a power module, e.g., at the devices, solder interfaces or the base plate, on a conventional digital signal processor. The real-time model as well as real-time junction temperature information are combined in a new Luenberger-style observer structure. Applying bandwidth partitioning, the observer estimates the temperatures throughout the power module every switching period and averaged over one excitation period with nearly zero lag, even if the junction temperature measurement exhibits delays and has noisy signals. Furthermore, it estimates errors in the loss prediction process that can be tracked over the lifetime of the power module to detect degradation of the devices or the power module. The observer and its features are experimentally evaluated under realistic operating conditions on a load emulator using a state-of-the-art automotive power module.
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