4.4 Article

Pinning Efficiency of One-Dimensional Artificial Pinning Centers in YBa2Cu3O7-x Thin Films

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TASC.2019.2895739

关键词

1D artificial pinning centers; APCs of mixed morphologies; coherent interface; pinning efficiency; YBCO nanocomposite film

资金

  1. National Science Foundation [NSF-DMR-1508494, NSF-ECCS-1809293/1809284]
  2. Air Force Research Laboratory Aerospace Systems Directorate
  3. Air Force Office of Scientific Research
  4. U.S. National Science Foundation [DMR-1565822]

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BaZrO3 (BZO) and BaHfO3 (BHO) form the comparable diameter similar to 5-6 nm of one-dimensional artificial pinning centers (1-D APCs) in YBa2 Cu-3 O7-x(YBCO) film. However, the lattice mismatch similar to 7.7% at the BZO/YBCO interface is slightly higher than similar to 7.1% at the BHO/YBCO interface. This leads to a much reduced interface dislocation density, and coherent interface at the BHO/YBCO film that has found a critical effect on the pinning efficiency of the 1-D APCs. This paper thus presents a quantitative comparison of pinning efficiency of single doped 4.0 vol.% BZO/BHO (SD) and double doped 4.0 vol.% BZO(BHO) + 3.0 vol.% Y2O3 doped (DD) YBCO films. A significantly higher pinning efficiency in terms of a maximum pinning force density F-p,F-max similar to 182 GN/m(3) at H-max > 9.0 T for BHO SD film may he due to coherent interface. This is about 2.5 times higher than that of its BZO SD counterparts at 65 K. In addition, the ratio of H-max and H*(accommodation field determined from the areal density of the 1-D APCs using TEM) is calculated about 0.74 and 0.53 for BHO SD and BZO SD films, respectively. This value is about 0.65 and 0.82 for BHO DD and BZO DD films, respectively at 65 K.

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