InGaAsP/InP Uni-Traveling-Carrier Photodiode at 1064-nm Wavelength

High-speed back-illuminated InGaAsP/InP unitraveling-carrier photodiodes (PDs) at 1064 nm were demonstrated with 3-dB bandwidth of 17.8 GHz at -5-V bias. PDs with 40-mu m-diameter deliver RF output power as high as 19.5 dBm at 13 GHz. This structure can achieve low dark current density of 1 x 10(-8) A/cm(2) at -5-V bias and quantum efficiency of 45.2% at 1064 nm. An analytical model based on S-parameter fitting was built to extract parameter to assess the bandwidth limiting factors.