期刊
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
卷 29, 期 9, 页码 604-606出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMWC.2019.2933186
关键词
Frequency dispersion; GaN high-electron mobility transistor (HEMT); microwave measurements; power amplifiers (PAs)
Trapping effects of a state-of-the-art 100-nm GaN-on-Si high-electron mobility transistor (HEMT) process for radio-frequency (RF) applications are characterized for the first time. Considering an operation with high peak-to-average power ratio (PAPR) signals, pulsed-RF measurements give a more direct understanding of the dynamic trap behavior than the third-order intermodulation products (IM3). The experimental data are used for estimating the time constants describing the transients in the presence of signals with different PAPRs.
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