Four-Way Filtering Power Divider Using SIW and Eighth-Mode SIW Cavities With Ultrawide Out-of-Band Rejection

A four-way filtering power divider (PD) based on a substrate-integrated waveguide (SIW) is presented. This structure is composed of two layers of the dielectric substrate. The eighth-mode SIW (EMSIW) technique is used to make four cavities in the upper substrate. In addition, an SIW cavity is provided in the lower substrate. To achieve an efficient transition between the two layers, four rectangular slots are etched on the middle metal planes. A circular slot is etched on the top metal layer of the EMSIW cavities to suppress the higher operating modes. To prove the validity, a four-way PD with a second-order bandpass filtering response is designed and fabricated. The measured results show that the PD achieves an insertion loss of 1.3 dB at 3.5 GHz, a return loss of higher than 17 dB, a 3-dB fractional bandwidth of 7.75%, and an out-of-band rejection of greater than 26 dB from 3.92 to 16.5 GHz. The results show that this PD has the advantages of compact size, high selectivity, and ultrawide out-of-band rejection.