Lateral 1.8 kV β-Ga2O3 MOSFET With 155 MW/cm2 Power Figure of Merit

Lateral beta-Ga2O3 MOSFET for power switching applications with a 1.8 kV breakdown voltage and a record power figure of merit of 155 MW/cm(2) are demonstrated. Sub-mu m gate length combined with gate recess was used to achieve low ON-state resistances with reasonable threshold voltages above -24 V. The combination of compensation-doped high-quality crystals, implantation-based inter-device isolation, and SiNx-passivation yielded in consistently high average breakdown field strengths of 1.8-2.2 MV/cm for gate-drain spacings between 2 and 10 mu m. These values outperform the results of more established wide-bandgap device technologies, such as SiC or GaN, and the major Ga2O3 material promise-a higher breakdown strength-is well demonstrated.