Microwave Power Rectification Using β-Ga2O3 Schottky Barrier Diodes

In this letter, beta-Ga2O3 Schottky barrier diodes (SBDs) for microwave operation were fabricated and microwave power rectification was demonstrated by using a single shunt circuit. The SBDs have Schottky contact area with a small diameter of 40 mu m and bonding pad of Ti/Au on a silicon oxide interlayer with a thickness of 1000 nm in order to reduce the parasitic capacitance. A maximum current density of 3.8 kA/cm(2) at the forward bias of 5 V and minimum different resistance of 0.63 m Omega cm(2) were obtained, while a catastrophic breakdown did not appear at the reverse bias of -80 V. Single shunt circuits based on beta-Ga2O3 SBDs were designed and fabricated on a printed circuit board. A microwave input signal with a power level of 23.7 dBm at a frequency of 1.4 GHz was successfully converted to DC output of 43 mV.