4.6 Article

Demonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling

期刊

IEEE ELECTRON DEVICE LETTERS
卷 40, 期 9, 页码 1396-1398

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2930106

关键词

InAs/InAsSb T2SL; IR detectors; LWIR; VLWIR

资金

  1. Polish National Research and Development Centre as Research Project [PL-TW4/3/2017]

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In this letter, we report on the InAsilnAsSb type-II superlattice (T2SL) detector operating with 50% cut-off wavelength (lambda(c)) similar to 15 mu m for temperatures (T) reached by three-stage thermoelectric (TE) cooling to minimize the detector's volume to reach size, weight, and power (SWaP) conditions. The presented device reaches detectivity (D*) similar to 10(9) Jones (lambda(c) similar to 15 mu m). These results are the first reported on single pixel T2SL InAs/InAsSb photoconductor with lambda(c) similar to 15 mu m where GaAs immersion lens (IL) was implemented and integrated with three-stage Peltier TE cooler.

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