期刊
IEEE ELECTRON DEVICE LETTERS
卷 40, 期 9, 页码 1396-1398出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2930106
关键词
InAs/InAsSb T2SL; IR detectors; LWIR; VLWIR
资金
- Polish National Research and Development Centre as Research Project [PL-TW4/3/2017]
In this letter, we report on the InAsilnAsSb type-II superlattice (T2SL) detector operating with 50% cut-off wavelength (lambda(c)) similar to 15 mu m for temperatures (T) reached by three-stage thermoelectric (TE) cooling to minimize the detector's volume to reach size, weight, and power (SWaP) conditions. The presented device reaches detectivity (D*) similar to 10(9) Jones (lambda(c) similar to 15 mu m). These results are the first reported on single pixel T2SL InAs/InAsSb photoconductor with lambda(c) similar to 15 mu m where GaAs immersion lens (IL) was implemented and integrated with three-stage Peltier TE cooler.
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