期刊
IEEE ELECTRON DEVICE LETTERS
卷 40, 期 9, 页码 1550-1553出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2928131
关键词
Nanoribbon; MoS2; MOSFET; steep-slope
资金
- European Union's Horizon 2020 Research and Innovation Programme [QUEFORMAL 829035]
- Italian Ministry of Education, University and Research (MIUR) through the PRIN Program under Project FIVE2D [2017SRYEJH]
We propose a steep-slope MoS2-nanoribbon field-effect transistor that exploits a narrow-energy conduction band to intrinsically filter out the thermionic tail of the electron energy distribution. We study the device operation principle and the performance dependence on the design parameters through atomistic self-consistent quantum simulations. Our results indicate that the device can provide high I-ON/I-OFF ratios, compatible with electronic applications, albeit biased at the ultra-low voltages of around 0.1V.
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