期刊
IEEE ELECTRON DEVICE LETTERS
卷 40, 期 9, 页码 1499-1502出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2929417
关键词
HEMT; monolithic integration; half-bridge; driver; GaN-on-QST (R)
Co-integration of the key power stage, namely gate drivers and half-bridge in a single-die solution, is a tremendous and inevitable challengeto realizing GaN power integrated circuits (GaN power ICs). In this letter, a monolithically integrated GaN half-bridge including the drivers were successfully fabricated on 200-mm engineered substrates of Qromis substrate technology (QST (R)). Deep trench isolation together with the buried oxide of the GaN-on-QST (R) isolates the high side, low side, and the drivers. While on GaN-on-Si, the back-gating effect more and more impedes the integration of a half-bridge's low side and high side as the voltage increases. This effect is fully eliminated using the proposed effective isolation strategy. In this letter, we will present a single-die GaN power IC exhibiting 200-V swift switching capability. Finally, based on this GaN power IC, a 48V-to-1V single-stage buck converter was successfully demonstrated.
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