期刊
CHEMSUSCHEM
卷 12, 期 22, 页码 5007-5014出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/cssc.201902000
关键词
interface engineering; low-dimensional layer; phenylethylammonium bromide; solar cells; tin perovskite
资金
- National Natural Science Foundation of China (NSFC) [61775091, 21671160]
- Shenzhen Key Laboratory Project [ZDSYS201602261933302]
- Natural Science Foundation of Shenzhen Innovation Committee [JCYJ20180504165851864]
- Defense Industrial Technology Development Program [JCKY2016208B012]
- Thousand Talents Program in Sichuan Province
- Longshan Talent Program of Southwest University of Science and Technology
- Chinese Ministry of Science and Ministry of Science and Education of the Republic of Croatia
The promising tin perovskite solar cells (PSCs) suffer from the oxidation of Sn2+ to Sn4+, leading to a disappointing conversion efficiency along with poor stability. In this work, phenylethylammonium bromide (PEABr) was employed to form an ultrathin, low-dimensional perovskite layer on the surface of the FASnI(3) (FA=formamidinium) absorber film to improve the interface of perovskite/PCBM ([6,6]-phenyl-C-61-butyricacid methyl) in the inverted planar device structure of the ITO (indium-doped tin oxide)/PEDOT:PSS [poly(3,4-ethylenedioxythiophene)/polystyrene sulfonate]/perovskite/[6,6]-phenyl-C-61-butyricacid methyl (PCBM)/BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) electrode. The device efficiency was enhanced from 4.77 to 7.86 % by this PEABr treatment. A series of characterizations proved that this modification could improve the crystallinity of the FASnI(3) perovskite by incorporating Br and forming an ultrathin, low-dimensional perovskite layer at the interface, which led to the effective suppression of Sn2+ oxidation, improved band level alignment, and decreased defect density. These effects contributed to the clear enhancement of conversion efficiency. Moreover, this treatment also led to remarkably enhanced device stability, with approximately 80 % of the initial efficiency retained after 350 h light soaking, whereas the control device failed within 140 h. This work deepens our understanding of the suppression effect of PEABr on the oxidation of Sn2+ and paves a new way to fabricate promising tin halide PSCs by facile interface engineering.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据