4.6 Article

Intense laser field effect on D2+ molecular complex localized in semiconductor quantum wells

期刊

CHEMICAL PHYSICS LETTERS
卷 730, 期 -, 页码 384-390

出版社

ELSEVIER
DOI: 10.1016/j.cplett.2019.06.024

关键词

Coupled donors; H-2(+)-like impurities; Quantum well; Laser field radiation; Binding energy; Finite element method

资金

  1. Colciencias
  2. BASAL/CONICYT [FB0807]
  3. FONDECYT [1180905]
  4. Institucion Universitaria Pascual Bravo [IN201710]
  5. Centers of excellence
  6. CEDENNA

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D-2(+) molecular ion in a semiconductor quantum well under laser-field radiation by using finite elements method within the effective mass approximation is theoretically studied. The effects of the laser radiation, donor-donor separation, and quantum well width on the D-2(+) total energy and the D-2(+) binding energy corresponding to the second ionization process D-2(+) -> D+ + D+ + e(-) are analyzed. We show that the laser-field radiation modifies significantly the equilibrium length and the dissociation energy of a D-2(+)-complex in a quantum well. Our results in the limit cases are in good agreement with those previously reported for a single donor impurity D-0.

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