期刊
APPLIED PHYSICS LETTERS
卷 115, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5107516
关键词
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资金
- Army Research Office [W911NF-17-1-0065]
- DARPA [GG11972.153060]
The unprecedented wide bandgap tunability (similar to 1 eV) of AlxIn1-xAsySb1-y lattice-matched to GaSb enables the fabrication of photodetectors over a wide range from near-infrared to mid-infrared. In this paper, the valence band-offsets in AlxIn1-xAsySb1-y with different Al compositions are analyzed by tight binding calculations and X-ray photoelectron spectroscopy measurements. The observed weak variation in valence band offsets is consistent with the lack of any minigaps in the valence band, compared to the conduction band.
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