期刊
APPLIED PHYSICS LETTERS
卷 115, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5123226
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资金
- New Knowledge and Innovation Program (KIP) Seed Grant program at Rensselaer Polytechnic Institute
- Center for Performance and Design of Nuclear Waste Forms and Containers, an Energy Frontier Research Center - U.S. Department of Energy, Office of Science, Basic Energy Sciences [DE-SC0016584]
A heterojunction photodiode was fabricated from Bi doped Cs2SnCl6 nanoparticles (Cs2SnCl6:Bi NPs) spin-coated on an epitaxially grown GaN substrate. With the back illumination configuration, the heterojunction photodiode demonstrated excellent narrow-band UV sensing capability with a full wavelength of half maximum of 18 nm and a maximum detectivity of 1.2 x 10(12) jones, which is promising for biomedical applications. In addition to the excellent narrow band UV sensitivity, the device also demonstrated a large linear dynamic range of 71 decibels (dB) and a fast photoresponse speed (a rise time of 0.75 mu s and a fall time of 0.91 mu s). The excellent performance is attributed to excellent carrier separation efficiency at the heterojunction interface and improved carrier collection efficiency through the multi-walled carbon nanotube (MWCNT) network. All the above advantages are of great importance for commercial deployment of perovskite-based photodetectors.
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