期刊
APPLIED PHYSICS EXPRESS
卷 12, 期 11, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/1882-0786/ab4934
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资金
- Ministry of Education, Culture, Sports, Science and Technology (MEXT) Program for research and development of next-generation semiconductor to realize energy-saving society
- Polish National Science Centre (NCN) [2018/29/B/ST5/00338]
To investigate Mg diffusion during ultra-high-pressure annealing, which activates Mg acceptors in GaN, GaN samples with p-n junctions prepared via epitaxial growth were annealed at 1573 K under 1 GPa. The profiles of Mg diffusion toward the underlying n-type layer cannot be explained by a simple diffusion model. We found that H atoms diffused along with Mg atoms. By considering the suppressed diffusion of positively charged interstitial H atoms due to the electric field in the depletion layer, we could better reproduce the Mg-H diffusion profiles, suggesting that H atoms play a key role in the Mg diffusion process. (C) 2019 The Japan Society of Applied Physics
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