期刊
APPLIED CATALYSIS B-ENVIRONMENTAL
卷 251, 期 -, 页码 94-101出版社
ELSEVIER
DOI: 10.1016/j.apcatb.2019.03.049
关键词
P-type; Bismuth vanadate; Hot carriers; Photocatalytic; Hydrogen evolution
资金
- National Natural Science Foundation of China [51402124, 51402123, 51602128]
- Natural Science Foundation of Shandong Province [BS2014CL020]
- China Postdoctoral Science Foundation [2016M590610]
Tetragonal zircon BiVO4 (P-BiVO4) were grown on fluorine-doped tin oxide (PTO) glass via hydrothermal method. The cathodic photocurrent and Mott-Schottky analysis indicate that the tetragonal zircon BiVO4 is a p-type semiconductor. Inductively coupled plasma (ICP) analysis and X-ray photoelectron spectrum showed that there are Bi vacancies and interstitial oxygen exist in the crystal, which are the origin of the p-type conductivity. The flat band potential of the P-BiVO4 is about 1.33 V (vs Ag/AgCl) inferred from Mott-Schottky plots. Combining with diffuse reflection spectrum and valence band X-ray photoelectron spectrum, the calculated conduction band value of the P-BiVO4 is about 0.06 V vs RHE, slightly higher than the reduction potential of hydrogen. However, the P-BiVO4 exhibit hydrogen production activity under Xe light irradiation even though its conduction band level is not negative enough. This can be attributed to the hot carrier processes in p-type semiconductors.
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