4.8 Article

Controlled Micro/Nanodome Formation in Proton-Irradiated Bulk Transition-Metal Dichalcogenides

期刊

ADVANCED MATERIALS
卷 31, 期 44, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201903795

关键词

hydrogen evolution reaction; photoluminescence; Raman; strain; transition-metal dichalcogenides; 2D materials

资金

  1. Centro di ricerca per le nanotecnologie applicate all'ingegneria - CNIS
  2. Sapienza Universita di Roma
  3. Italian Ministry for Education, University and Research within the Futuro in Ricerca (FIRB) program (project DeLIGHTeD) [RBFR12RS1W]
  4. European Union [641899]
  5. Australian Research Council (ARC) [DE140100805, DP180103238]
  6. ARC Centre of Excellence in Future Low-Energy Electronics Technologies [CE170100039]
  7. Regione Lazio programme Progetti di Gruppi di ricerca [13/2008, 85-2017-15200]

向作者/读者索取更多资源

At the few-atom-thick limit, transition-metal dichalcogenides (TMDs) exhibit strongly interconnected structural and optoelectronic properties. The possibility to tailor the latter by controlling the former is expected to have a great impact on applied and fundamental research. As shown here, proton irradiation deeply affects the surface morphology of bulk TMD crystals. Protons penetrate the top layer, resulting in the production and progressive accumulation of molecular hydrogen in the first interlayer region. This leads to the blistering of one-monolayer thick domes, which stud the crystal surface and locally turn the dark bulk material into an efficient light emitter. The domes are stable (>2-year lifetime) and robust, and host strong, complex strain fields. Lithographic techniques provide a means to engineer the formation process so that the domes can be produced with well-ordered positions and sizes tunable from the nanometer to the micrometer scale, with important prospects for so far unattainable applications.

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