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Perovskite-Based Phototransistors and Hybrid Photodetectors

期刊

ADVANCED FUNCTIONAL MATERIALS
卷 30, 期 20, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201903907

关键词

hybrid photodetectors; perovskite; photogating effect; phototransistors

资金

  1. Research Grants Council (RGC) of Hong Kong, China [PolyU 152068/18E]
  2. Hong Kong Polytechnic University [1-ZVGH]
  3. Fundamental Research Funds for the Central Universities [JZ2018HGPB0275, JZ2018HGTA0220]

向作者/读者索取更多资源

In the past several years, organic-inorganic hybrid perovskites and all inorganic perovskites have attracted enormous research interest in a variety of optoelectronic applications including solar cells, light-emitting diodes, semiconductor lasers, and photodetectors for their plenty of appealing electrical and optoelectrical properties. Benefiting from the inherent amplification function of transistors and the pronounced photogating effect, perovskite-based phototransistors and hybrid photodetectors can provide very high photoresponsivity and gain, rendering them highly promising for some specific applications especially ultrasensitive light detection. A review on the recent progress of phototransistors and hybrid photodetectors using perovskites as light-sensitive materials is presented. The efforts and development in 3D and 2D perovskite-based phototransistors, and perovskite/functional material (e.g., graphene, 2D semiconductors, organic semiconductors, and other semiconductors) heterojunction-based hybrid photodetectors are introduced and discussed systematically. Some processing techniques for optimizing device performance are also addressed. In the final section, a conclusion of the research achievements is presented and possible challenges as well as outlook are provided to guide future activity in this research field.

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