期刊
ADVANCED FUNCTIONAL MATERIALS
卷 29, 期 49, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201906686
关键词
all-inorganic halide perovskites; artificial synapses; electrochemical metallization; neuromorphic computing; resistive switching memory
类别
资金
- Future Material Discovery Program [2016M3D1A1027666, 2018M3D1A1058793]
- Basic Science Research Program [2017R1A2B3009135]
- Korea government MSIT [2019M3E6A1064763]
- Basic Research Laboratory Program through the National Research Foundation of Korea [2018R1A4A1022647]
- KOREA HYDRO & NUCLEAR POWER CO., LTD. [2018-Tech-21]
- National Research Foundation of Korea [2017H1A2A1044293, 2019M3E6A1064763, 2018M3D1A1058793] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Neuromorphic computing, which mimics biological neural networks, can overcome the high-power and large-throughput problems of current von Neumann computing. Two-terminal memristors are regarded as promising candidates for artificial synapses, which are the fundamental functional units of neuromorphic computing systems. All-inorganic CsPbI3 perovskite-based memristors are feasible to use in resistive switching memory and artificial synapses due to their fast ion migration. However, the ideal perovskite phase alpha-CsPbI3 is structurally unstable at ambient temperature and rapidly degrades to a non-perovskite delta-CsPbI3 phase. Here, dual-phase (Cs3Bi2I9)(0.4)-(CsPbI3)(0.6) is successfully fabricated to achieve improved air stability and surface morphology compared to each single phase. Notably, the Ag/polymethylmethacrylate/(Cs3Bi2I9)(0.4)-(CsPbI3)(0.6)/Pt device exhibits non-volatile memory functions with an endurance of approximate to 10(3) cycles and retention of approximate to 10(4) s with low operation voltages. Moreover, the device successfully emulates synaptic behavior such as long-term potentiation/depression and spike timing/width-dependent plasticity. This study will contribute to improving the structural and mechanical stability of all-inorganic halide perovskites (IHPs) via the formation of dual phase. In addition, it proves the great potential of IHPs for use in low-power non-volatile memory devices and electronic synapses.
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