期刊
ADVANCED FUNCTIONAL MATERIALS
卷 30, 期 20, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201904632
关键词
flexible electronics; oxide thin-film transistors; printing technology; solution processes
类别
资金
- Nano.Material Technology Development Program through the National Research Foundation of Korea(NRF) - Ministry of Science and ICT [2018M3A7B4071517]
Solution processing, including printing technology, is a promising technique for oxide thin-film transistor (TFTs) fabrication because it tends to be a cost-effective process with high composition controllability and high throughput. However, solution-processed oxide TFTs are limited by low-performance and stability issues, which require high-temperature annealing. This high thermal budget in the fabrication process inhibits oxide TFTs from being applied to flexible electronics. There have been numerous attempts to promote the desired electrical characteristics of solution-processed oxide TFTs at lower fabrication temperatures. Recent techniques for achieving low-temperature (<350 degrees C) solution-processed and printed oxide TFTs, in terms of the materials, processes, and structural engineering methods currently in use are reviewed. Moreover, the core techniques for both n-type and p-type oxide-based channel layers, gate dielectric layers, and electrode layers in oxide TFTs are addressed. Finally, various multifunctional and emerging applications based on low-temperature solution-processed oxide TFTs are introduced and future outlooks for this highly promising research are suggested.
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