期刊
ADVANCED FUNCTIONAL MATERIALS
卷 30, 期 20, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201903724
关键词
2D atomic films; antiambipolar transistors; heterointerface; multivalued logic circuits; negative differential resistance
类别
资金
- World Premier International Center (WPI) for Materials Nanoarchitectonics (MANA) of the National Institute for Materials Science (NIMS), Tsukuba, Japan
- JSPS KAKENHI [JP19H00866]
An antiambipolar transistor exhibits a steep increase and decrease in drain current within a certain range of gate bias voltage. This unique feature is brought about by a partially stacked pn-heterointerface formed around the center of the transistor channel. First, this review discusses recent topics related to the antiambipolar transistor, including the constituent materials, operation mechanism, and factors controlling device performance. Then, novel functional applications, such as optoelectronics and multivalued logic circuits, are introduced. The transistor channels of antiambipolar transistors consist largely of 2D atomically thin films or organic semiconductors. These materials are mechanically flexible. Therefore, antiambipolar transistors have the potential to enable advances to be made in the field of flexible electronics.
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