期刊
ADVANCED FUNCTIONAL MATERIALS
卷 29, 期 52, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201903475
关键词
charge transport; nanodevices; quantum dots; single electron transistors
类别
资金
- Department of Energy Advanced Manufacturing Office [DE-EE0008311]
- National Institute of Standards and Technology (NIST) Innovations in Measurement Science award, Atom-Based Devices: Single Atom Transistors to Solid State Quantum Computing
Atomically precise fabrication has an important role to play in developing atom-based electronic devices for use in quantum information processing, quantum materials research, and quantum sensing. Atom-by-atom fabrication has the potential to enable precise control over tunnel coupling, exchange coupling, on-site charging energies, and other key properties of basic devices needed for solid-state quantum computing and analog quantum simulation. Using hydrogen-based scanning probe lithography, individual dopant atoms are deterministically placed relative to atomically aligned contacts and gates to build single electron transistors, single atom transistors, and gate-controlled quantum sensing devices. The key steps required to fabricate and demonstrate the essential building blocks needed for spin selective initialization/readout and coherent quantum manipulation are described.
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