4.8 Article

Atom-by-Atom Fabrication of Single and Few Dopant Quantum Devices

期刊

ADVANCED FUNCTIONAL MATERIALS
卷 29, 期 52, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201903475

关键词

charge transport; nanodevices; quantum dots; single electron transistors

资金

  1. Department of Energy Advanced Manufacturing Office [DE-EE0008311]
  2. National Institute of Standards and Technology (NIST) Innovations in Measurement Science award, Atom-Based Devices: Single Atom Transistors to Solid State Quantum Computing

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Atomically precise fabrication has an important role to play in developing atom-based electronic devices for use in quantum information processing, quantum materials research, and quantum sensing. Atom-by-atom fabrication has the potential to enable precise control over tunnel coupling, exchange coupling, on-site charging energies, and other key properties of basic devices needed for solid-state quantum computing and analog quantum simulation. Using hydrogen-based scanning probe lithography, individual dopant atoms are deterministically placed relative to atomically aligned contacts and gates to build single electron transistors, single atom transistors, and gate-controlled quantum sensing devices. The key steps required to fabricate and demonstrate the essential building blocks needed for spin selective initialization/readout and coherent quantum manipulation are described.

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