期刊
ACS APPLIED MATERIALS & INTERFACES
卷 11, 期 35, 页码 32108-32114出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b08189
关键词
ferroelectric hafnium oxide; ferroelectric tunnel junction; ferroelectric memristor; resistive switching; second-order memristor; synaptic plasticity
资金
- Russian Foundation for Advanced Research Projects
- Russian Science Foundation [18-14-00434]
- Russian Science Foundation [18-12-00434] Funding Source: Russian Science Foundation
While the conductance of a first-order memristor is defined entirely by the external stimuli, in the second-order memristor it is governed by the both the external stimuli and its instant internal state. As a result, the dynamics of such devices allows to naturally emulate the temporal behavior of biological synapses, which encodes the spike timing information in synaptic weights. Here, we demonstrate a new type of second-order memristor functionality in the ferroelectric HfO2-based tunnel junction on silicon. The continuous change of conductance in the p(+)-Si/Hf0.5Zr0.5O2/TiN tunnel junction is achieved via the gradual switching of polarization in ferroelectric domains of polycrystalline Hf0.5Zr0.5O2 layer, whereas the combined dynamics of the built-in electric field and charge trapping/detrapping at the defect states at the bottom Si interface defines the temporal behavior of the memristor device, similar to synapses in biological systems. The implemented ferroelectric second-order memristor exhibits various synaptic functionalities, such as paired-pulse potentiation/depression and spike-rate-dependent plasticity, and can serve as a building block for the development of neuromorphic computing architectures.
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