期刊
ACS APPLIED MATERIALS & INTERFACES
卷 11, 期 39, 页码 35935-35940出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b14319
关键词
field-effect transistor; Ni-3(HITP)(2); metal-organic framework film; in situ growth; biosensors
资金
- National Key R&D Program of China [2016YFCO201103]
- National Natural Science Foundation of China [11674320]
- Key Research Projects of the Frontier Science CAS [QYZDB-SSW-JSC017]
Ni-3(HITP)(2), a novel and promising two-dimensional metal-organic framework (MOF) material, has been utilized in the areas of catalysis, sensing, and supercapacitors. It is very suitable for preparing field-effect transistor (FET) devices due to its good conductivity, porous structure, as well as easy film formation. Nevertheless, there is a challenge to transfer membrane materials undamaged to the substrates. Here, we reported a simple approach to fabricate the Ni-MOF-based FET with an in situ grown Ni-3(HITP)(2) membrane as the channel material of the FET. With this method, we obtained a large-area, dense, and uniform film composed of thin sheets, and the thickness and density of the MOF film were tunable through changing the reaction time. The as-prepared Ni-MOF-FET had a good mobility of 45.4 cm(2) V-1 s(-1) and on/off current ratio of 2.29 x 10(3). Moreover, this FET served as a liquid-gated device for the first time with bipolar behavior and good response to the gluconic acid at the range from 10(-6) to 10(-3) g/mL, verifying the potential of the Ni-MOF-FET as biosensors.
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